? semiconductor components industries, llc, 2007 august, 2007 - rev. 1 1 publication order number: NTLJF3118N/d NTLJF3118N power mosfet and schottky diode 20 v, 4.6 a, cool n-channel, with 2.0 a schottky barrier diode, 2x2 mm wdfn package features ? wdfn 2x2 mm package provides exposed drain pad for excellent thermal conduction ? footprint same as sc-88 package ? 1.8 v v gs rated r ds(on) ? low profile (< 0.8 mm) for easy fit in thin environments ? low v f 2 a schottky diode ? this is a pb-free device applications ? dc-dc boost/buck converter ? low voltage hard disk dc power source maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain-to-source voltage v dss 20 v gate-to-source voltage v gs 12 v continuous drain current (note 1) steady state t a = 25 c i d 3.8 a t a = 85 c 2.8 t 5 s t a = 25 c 4.6 power dissipation (note 1) steady state t a = 25 c p d 1.5 w t 5 s 2.2 continuous drain current (note 2) steady state t a = 25 c i d 2.6 a t a = 85 c 1.9 power dissipation (note 2) t a = 25 c p d 0.7 pulsed drain current t p = 10 s i dm 18 a operating junction and storage temperature t j , t stg -55 to 150 c source current (body diode) i s 1.8 a lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 2 in sq pad size (cu area = 1.127 in sq [2 oz] including traces). 2. surface mounted on fr4 board using the minimum recommended pad size. 1 2 3 6 5 4 a n/c d k g s http://onsemi.com 20 v 20 v 85 m @ 2.5 v 65 m @ 4.5 v 2.0 a r ds(on) max 2.0 a 0.41 v i d max v (br)dss mosfet schottky diode v r max i f max v f typ 120 m @ 1.8 v g s n-channel mosfet d k a schottky diode jk = specific device code m = date code = pb-free package jk m 1 2 3 6 5 4 wdfn6 case 506an marking diagram (top view) 1 see detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. ordering information pin connections k d (note: microdot may be in either location) 1.7 a 3.8 a
NTLJF3118N http://onsemi.com 2 schottky diode maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit peak repetitive reverse voltage v rrm 20 v dc blocking voltage v r 20 v average rectified forward current i f 2.0 a stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. thermal resistance ratings parameter symbol max unit junction-to-ambient C steady state (note 3) r ja 83 c/w junction-to-ambient C t 5 s (note 3) r ja 58 junction-to-ambient C steady state min pad (note 4) r ja 177 3. surface mounted on fr4 board using 2 in sq pad size (cu area = 1.127 in sq [2 oz] including traces). 4. surface mounted on fr4 board using the minimum recommended pad size. mosfet electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-to-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 20 v drain-to-source breakdown voltage temperature coefficient v (br)dss /t j i d = 250 a, ref to 25 c 10.4 mv/ c zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v t j = 25 c 1.0 a t j = 85 c 10 gate-to-source leakage current i gss v ds = 0 v, v gs = 8.0 v 100 na on characteristics (note 5) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 0.4 0.7 1.0 v gate threshold temperature coefficient v gs(th) /t j -3.0 mv/ c drain-to-source on-resistance r ds(on) v gs = 4.5, i d = 3.8 a 37 65 m v gs = 2.5, i d = 2.0 a 46 85 v gs = 1.8, i d = 1.7 a 65 120 forward transconductance g fs v ds = 10 v, i d =1.7 a 4.2 s charges, capacitances and gate resistance input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = 10 v 271 pf output capacitance c oss 72 reverse transfer capacitance c rss 43 total gate charge q g(tot) v gs = 4.5 v, v ds = 10 v, i d = 3.8 a 3.7 nc threshold gate charge q g(th) 0.3 gate-to-source charge q gs 0.6 gate-to-drain charge q gd 1.0 switching characteristics (note 6) turn-on delay time t d(on) v gs = 4.5 v, v dd = 16 v, i d = 1.0 a, r g = 2.0 3.8 ns rise time t r 4.7 turn-off delay time t d(off) 11.1 fall time t f 5.8 drain-source diode characteristics forward diode voltage v sd v gs = 0 v, is =1.0 a t j = 25 c 0.69 1.0 v reverse recovery time t rr v gs = 0 v, d isd /d t = 100 a/ s, i s = 1.0 a 10.2 ns 5. pulse test: pulse width 300 s, duty cycle 2%. 6. switching characteristics are independent of operating junction temperatures.
NTLJF3118N http://onsemi.com 3 schottky diode electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min typ max unit maximum instantaneous forward voltage v f i f = 0.1 a 0.26 0.35 v i f = 1.0 a 0.35 0.42 i f = 2.0 a 0.41 0.52 maximum instantaneous reverse current i r v r = 20 v 0.20 5.0 ma v r = 10 v 0.045 1.0 schottky diode electrical characteristics (t j = 85 c unless otherwise noted) parameter symbol test conditions min typ max unit maximum instantaneous forward voltage v f i f = 0.1 a 0.18 v i f = 1.0 a 0.29 i f = 2.0 a 0.36 maximum instantaneous reverse current i r v r = 20 v 4.9 ma v r = 10 v 1.6 schottky diode electrical characteristics (t j = 125 c unless otherwise noted) parameter symbol test conditions min typ max unit maximum instantaneous forward voltage v f i f = 0.1 a 0.13 v i f = 1.0 a 0.25 i f = 2.0 a 0.33 maximum instantaneous reverse current i r v r = 20 v 42 ma v r = 10 v 13 schottky diode electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min typ max unit capacitance c v r = 5.0 v, f = 1.0 mhz 52.3 pf ordering information device package shipping ? NTLJF3118Ntag wdfn6 (pb-free) 3000 / tape & reel NTLJF3118Ntbg wdfn6 (pb-free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
NTLJF3118N http://onsemi.com 4 typical n-channel performance curves (t j = 25 c unless otherwise noted) 1 0.14 3 2 0.1 0 410 1.5 1.2 1.4 1.0 0.8 0.7 0 0.5 2 1 v ds , drain-to-source voltage (v) i d , drain current (amps) 0 v gs , gate-to-source voltage (v) figure 1. on-region characteristics figure 2. transfer characteristics i d , drain current (amps) 1.0 0.07 5.0 2.0 0.05 0.04 0.03 6.0 figure 3. on-resistance versus drain current v gs , gate-to-source voltage (v) figure 4. on-resistance versus drain current and gate voltage i d , drain current (a) r ds(on) , drain-to-source resistance ( ) r ds(on) , drain-to-source resistance ( ) figure 5. on-resistance variation with temperature t j , junction temperature ( c) figure 6. drain-to-source leakage current versus voltage v ds , drain-to-source voltage (v) r ds(on) , drain-to-source resistance (normalized) i dss , leakage (na) 10 -50 50 25 0 -25 75 125 100 1 212 10 4 3 2 4 v ds 10 v t j = 25 c t j = -55 c t j = 100 c v gs = 1.8 v v gs = 0 v i d = 3.8 a v gs = 4.5 v 6 0.1 t j = 100 c t j = 150 c 2 0 10 1.5 t j = 25 c 20 100 v gs = 4 v to 2.2 v 1.8 v 1000 4 8 4 0.06 0.08 t j = 25 c i d = 3.8 a 150 10000 2.5 2.0 v 1.4 v 1.6 v 1.2 v t j = 25 c 0.12 0.06 0.02 0.04 v gs = 4.5 v v gs = 2.5 v 6 8 14 16 18 2 0.08 0.09 4.0 3.0 56789 1.3 1.1 0.9 1.5 2.5 3.5 6 8
NTLJF3118N http://onsemi.com 5 typical n-channel performance curves (t j = 25 c unless otherwise noted) 5 5 15 20 gate-to-source or drain-to-source voltage (v) c, capacitance (pf) figure 7. capacitance variation 400 0 v gs v ds 300 100 010 v ds = 0 v t j = 25 c c oss c rss 500 600 c iss figure 8. gate-to-source and drain-to-source voltage versus total charge figure 9. resistive switching time variation versus gate resistance r g , gate resistance ( ) 1 10 100 1 t, time (ns) 100 t r t d(off) t d(on) t f 10 v dd = 16 v i d = 1.0 a v gs = 4.5 v 2 0 0.4 v sd , source-to-drain voltage (v) i s , source current (amps) v gs = 0 v figure 10. diode forward voltage versus current 0.9 0.5 0.6 1 10 t j = 25 c v gs , gate-to-source voltage (volts) 0 3 0 q g , total gate charge (nc) 5 4 123 i d = 3.8 a t j = 25 c v gs q gs q gd qt 2 1 4 0 20 12 8 4 v ds , drain-to-source voltage (volts) v ds 16 200 v gs = 0 v 1.5 0.8 0.7 0.5
NTLJF3118N http://onsemi.com 6 typical schottky performance curves (t j = 25 c unless otherwise noted) figure 11. typical forward voltage figure 12. maximum forward voltage figure 13. typical reverse current figure 14. maximum reverse current v f , instantaneous forward voltage (v) 10 1.0 0.1 0 v r , reverse voltage (v) i f , instantaneous forward current (amps ) i i 0.6 0.8 10 20 0.1 0.2 0.4 , instantaneous forward current (amps) f t j = 25 c t j = 85 c t j = 125 c t j = -55 c 10e-6 100e-6 t j = 25 c t j = 85 c t j = 125 c 1.0e-3 10e-3 1.0e+0 , reverse current (amps) r i , maximum reverse current (amps) r 1.0 0.7 0.3 0.5 v f , maximum forward voltage (v) 10 1.0 0.1 0.6 0.8 0.1 0.2 0.4 t j = 25 c t j = 85 c t j = 125 c 1.0 0.7 0.3 0.5 100e-3 0 v r , reverse voltage (v) 10 20 10e-6 100e-6 t j = 25 c t j = 85 c t j = 125 c 1.0e-3 10e-3 1.0e+0 100e-3 0.9 0.9
NTLJF3118N http://onsemi.com 7 package dimensions wdfn6, 2x2 case 506an-01 issue b notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.15 and 0.20mm from terminal. 4. coplanarity applies to the exposed pad as well as the terminals. c a seating plane d b e 0.10 c a3 a a1 2x 2x 0.10 c dim a min max millimeters 0.70 0.80 a1 0.00 0.05 a3 0.20 ref b 0.25 0.35 d 2.00 bsc d2 0.57 0.77 0.90 1.10 e 2.00 bsc 0.25 ref e2 e 0.65 bsc k 0.20 0.30 l 0.15 ref j pin one reference 0.08 c 0.10 c 6x a 0.10 c note 3 l e d2 e2 b b 3 6 6x 1 k 4 6x 6x 0.05 c 4x d2 2x j 6x bottom view 2x 2.30 6x pitch 0.25 0.25 0.72 0.35 0.65 1.05 6x 0.43 dimensions: millimeters 1 soldering footprint * *for additional information on our pb-free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. typical parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including typicals must be validated for each customer application by customer's technical experts. scillc does n ot convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended f or surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in a ny manner. NTLJF3118N/d cool is a trademark of semiconductor components industries, llc (scillc). publication ordering information n. american technical support : 800-282-9855 toll free ?usa/canada europe, middle east and africa technical support: ?phone: 421 33 790 2910 japan customer focus center ?phone: 81-3-5773-3850 literature fulfillment : ?literature distribution center for on semiconductor ?p.o. box 5163, denver, colorado 80217 usa ? phone : 303-675-2175 or 800-344-3860 toll free usa/canada ? fax : 303-675-2176 or 800-344-3867 toll free usa/canada ? email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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